cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 1/6 BTA1640F3 cystek product specification pnp epitaxial planar power transistor BTA1640F3 features ? low collector-emitter saturation voltage, v ce(sat) = -0.4v(max) @ i c = -3a, i b =-0.1a bv ceo -30v i c -7a v ce(sat) -0.4v(max) ? excellent current gain linearity ? pb-free lead plating package symbol outline BTA1640F3 to-263 b base c collector b c e e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -18 v collector current (dc) i c -7 collector current (pulse) i cp -10 (note 1) a power dissipation @ t a =25 p d 2 power dissipation @ t c =25 p d 60 w thermal resistance, junction to ambient r ja 62.5 c/w thermal resistance, junction to case r jc 2.08 c/w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : 1. single pulse , pw Q 300 s, duty Q 2%.
cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 2/6 BTA1640F3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions *bv ceo -30 - - v i c =-10ma, i b =0 bv cbo -30 - - v i c =-1ma, i e =0 bv ebo -18 - - v i e =-1ma, i c =0 i ceo - - -50 a v ce =-30v, i b =0 i cbo - - -10 a v cb =-30v, i b =0 i ebo - - -10 a v eb =-18v, i c =0 *v ce(sat) - - -0.4 v i c =-3a, i b =-100ma *v be(sat) - - -1 v i c =-3a, i b =-100ma *h fe 180 - 350 - v ce =-2v, i c =-200ma *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking to-263 BTA1640F3 800 pcs / tape & reel a1640 (pb-free lead plating package) typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vce(sat) ic=50ib
cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 3/6 BTA1640F3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=50ib grounded emitter output characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0 2ma 6ma 10ma 20ma grounded emitter output characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0ma 5ma 10ma 25ma 50ma power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 10 20 30 40 50 60 70 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 4/6 BTA1640F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 5/6 BTA1640F3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c657f3 issued date : 2010.09.21 revised date : page no. : 6/6 BTA1640F3 cystek product specification to-263 dimension *:typical inches a b c d 123 k l j g h f e 2 1 2 3 i millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 - - 6 8 f 0.0450 0.0550 1.14 1.40 2 - - 6 8 g 0.0900 0.1100 2.29 2.79 3 - - 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style : pin 1.base 2.collector 3.emitter 3-lead plastic surface mounted package cystek package code : f3 marking : device name year code: 92009, 0 2010,?, etc lot no.: 01~99 1jan, 2 feb,?,9 sep, a oct, b nov, c dec month code:
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